FGH60N60UFD

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Pc ⓘ - Maximum Power Dissipation: 298 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

Tj ⓘ - Maximum Junction Temperature: 150 ℃

tr ⓘ - Rise Time, typ: 58 nS

Coesⓘ - Output Capacitance, typ: 325 pF

Qg ⓘ - Total Gate Charge, typ: 188 nC

Package: TO247

Fgh 60n60 Fgh60n60 Transistor IGBT + Diodo 60Amp 600v

$10.000,00

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